Cargando…

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-perform...

Descripción completa

Detalles Bibliográficos
Autores principales:	Peng, Bin, Zheng, Wei, Qin, Jiantao, Zhang, Wanli
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5873009/ https://www.ncbi.nlm.nih.gov/pubmed/29543770 http://dx.doi.org/10.3390/ma11030430

Ejemplares similares

Junctionless field-effect transistors: design, modeling and simulation
por: Sahay, Shubham, et al.
Publicado: (2019)

Modeling nanowire and double-gate junctionless field-effect transistors
por: Jazaeri, Farzan, et al.
Publicado: (2018)

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions
por: Shukla, Rajendra P., et al.
Publicado: (2022)

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
por: Cao, Ronggen, et al.
Publicado: (2014)

Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage
por: Kuo, Po-Yi, et al.
Publicado: (2019)

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature
por: Huang, Zhishuo, et al.
Publicado: (2016)

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact
por: Lin, Yu-Ru, et al.
Publicado: (2017)

Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
por: Cheng, Ya-Chi, et al.
Publicado: (2014)

Valley-engineered ultra-thin silicon for high-performance junctionless transistors
por: Kim, Seung-Yoon, et al.
Publicado: (2016)

Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison
por: Tamersit, Khalil, et al.
Publicado: (2022)

Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors
por: Larki, Farhad, et al.
Publicado: (2014)

Sub-5 nm Gate-Length Monolayer Selenene Transistors
por: Li, Qiang, et al.
Publicado: (2023)

Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
por: Dou, Wei, et al.
Publicado: (2019)

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors
por: Choi, Junhwan, et al.
Publicado: (2023)

Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure
por: Cheng, Ya-Chi, et al.
Publicado: (2014)

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length
por: Song, Seunguk, et al.
Publicado: (2022)

Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications
por: Zhang, Youwei, et al.
Publicado: (2016)

Variance Reduction during the Fabrication of Sub-20 nm Si Cylindrical Nanopillars for Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors
por: Ye, Shujun, et al.
Publicado: (2019)

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
por: Oi, Nobutaka, et al.
Publicado: (2018)

Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors
por: Wang, Cong, et al.
Publicado: (2020)

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study
por: Zhu, Jiaduo, et al.
Publicado: (2019)

A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
por: Yeh, Mu-Shih, et al.
Publicado: (2014)

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography
por: Larki, Farhad, et al.
Publicado: (2012)

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance
por: Tamersit, Khalil, et al.
Publicado: (2022)

Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices
por: Liu, Yu, et al.
Publicado: (2022)

A two-dimensional semiconductor transistor with boosted gate control and sensing ability
por: Xu, Jing, et al.
Publicado: (2017)

Two-Dimensional Pnictogen for Field-Effect Transistors
por: Zhou, Wenhan, et al.
Publicado: (2019)

Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors
por: Lee, Sanguk, et al.
Publicado: (2022)

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors
por: Puebla, Sergio, et al.
Publicado: (2022)

Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
por: Abiram, Gnanasampanthan, et al.
Publicado: (2022)

Instrumentation for Gate Current Noise Measurements on sub-100 nm MOS Transistors
por: Gaioni, L, et al.
Publicado: (2008)

Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
por: Dehzangi, Arash, et al.
Publicado: (2012)

Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices
por: Liu, Yu, et al.
Publicado: (2022)

Diketopyrrolopyrrole Based Organic Semiconductor Materials for Field-Effect Transistors
por: Zou, Xiangyu, et al.
Publicado: (2021)

Superior High Transistor’s Effective Mobility of 325 cm(2)/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
por: Pooja, Pheiroijam, et al.
Publicado: (2023)

Imperfect two-dimensional topological insulator field-effect transistors
por: Vandenberghe, William G., et al.
Publicado: (2017)

High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
por: Wu, Tsung-Ta, et al.
Publicado: (2017)

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation
por: Zheng, Jiaxin, et al.
Publicado: (2013)

Highly Oriented Liquid Crystal Semiconductor for Organic Field-Effect Transistors
por: Han, Moon Jong, et al.
Publicado: (2018)

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared
por: Asgari, Mahdi, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_ktdmole24pkhcv0gpur00n76hl