Enhanced Ti(0.84)Ta(0.16)N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers

We compare the performance of conventional DC magnetron sputter-deposited (DCMS) TiN diffusion barriers between Cu overlayers and Si(001) substrates with Ti(0.84)Ta(0.16)N barriers grown by hybrid DCMS/high-power impulse magnetron sputtering (HiPIMS) with substrate bias synchronized to the metal-rich portion of each pulse. DCMS power is applied to a Ti target, and HiPIMS applied to Ta. No external substrate heating is used in either the DCMS or hybrid DCMS/HiPIMS process in order to meet future industrial thermal-budget requirements. Barrier efficiency in inhibiting Cu diffusion into Si(001) while annealing for 1 hour at temperatures between 700 and 900 °C is investigated using scanning electron microscopy, X-ray diffraction, four-point-probe sheet resistance measurements, transmission electron microscopy, and energy-dispersive X-ray spectroscopy profiling. Ti(0.84)Ta(0.16)N barriers are shown to prevent large-scale Cu diffusion at temperatures up to 900 °C, while conventional TiN barriers fail at ≤700 °C. The improved performance of the Ti(0.84)Ta(0.16)N barrier is due to film densification resulting from HiPIMS pulsed irradiation of the growing film with synchronized Ta ions. The heavy ion bombardment dynamically enhances near-surface atomic mixing during barrier-layer deposition.