Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

Recent development of group-IV alloy GeSn indicates its bright future for the application of mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. However, its crystal growth remains a great challenge. In this...

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Detalles Bibliográficos
Autores principales: Dou, Wei, Benamara, Mourad, Mosleh, Aboozar, Margetis, Joe, Grant, Perry, Zhou, Yiyin, Al-Kabi, Sattar, Du, Wei, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5884787/
https://www.ncbi.nlm.nih.gov/pubmed/29618825
http://dx.doi.org/10.1038/s41598-018-24018-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5884787/
https://www.ncbi.nlm.nih.gov/pubmed/29618825
http://dx.doi.org/10.1038/s41598-018-24018-6

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