Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experim...

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Detalles Bibliográficos
Autores principales: Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lídia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., Yao, Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899090/
https://www.ncbi.nlm.nih.gov/pubmed/29654301
http://dx.doi.org/10.1038/s41467-018-03897-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899090/
https://www.ncbi.nlm.nih.gov/pubmed/29654301
http://dx.doi.org/10.1038/s41467-018-03897-3

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