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Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experim...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899090/ https://www.ncbi.nlm.nih.gov/pubmed/29654301 http://dx.doi.org/10.1038/s41467-018-03897-3 |