Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Photoelectric properties of the metamorphic InAs/In(x)Ga(1 − x)As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of I...

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Detalles Bibliográficos
Autores principales: Golovynskyi, Sergii, Datsenko, Oleksandr I., Seravalli, Luca, Trevisi, Giovanna, Frigeri, Paola, Babichuk, Ivan S., Golovynska, Iuliia, Qu, Junle
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5902441/
https://www.ncbi.nlm.nih.gov/pubmed/29663094
http://dx.doi.org/10.1186/s11671-018-2524-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5902441/
https://www.ncbi.nlm.nih.gov/pubmed/29663094
http://dx.doi.org/10.1186/s11671-018-2524-3

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