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Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Photoelectric properties of the metamorphic InAs/In(x)Ga(1 − x)As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of I...

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Detalles Bibliográficos
Autores principales:	Golovynskyi, Sergii, Datsenko, Oleksandr I., Seravalli, Luca, Trevisi, Giovanna, Frigeri, Paola, Babichuk, Ivan S., Golovynska, Iuliia, Qu, Junle
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2018
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5902441/ https://www.ncbi.nlm.nih.gov/pubmed/29663094 http://dx.doi.org/10.1186/s11671-018-2524-3

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