Cargando…
Scalability assessment of Group-IV mono-chalcogenide based tunnel FET
Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. Recently discovered atomically t...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5902579/ https://www.ncbi.nlm.nih.gov/pubmed/29662107 http://dx.doi.org/10.1038/s41598-018-24209-1 |