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Scalability assessment of Group-IV mono-chalcogenide based tunnel FET

Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. Recently discovered atomically t...

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Detalles Bibliográficos
Autores principales:	Brahma, Madhuchhanda, Kabiraj, Arnab, Saha, Dipankar, Mahapatra, Santanu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5902579/ https://www.ncbi.nlm.nih.gov/pubmed/29662107 http://dx.doi.org/10.1038/s41598-018-24209-1

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