Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance

Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy subbands. This effect was observed in semiconductors like GaAs which has a direct bandgap of very low effective mass and an indirect subband of hig...

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Detalles Bibliográficos
Autores principales: Shiri, Daryoush, Verma, Amit, Nekovei, Reza, Isacsson, Andreas, Selvakumar, C. R., Anantram, M. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5908846/
https://www.ncbi.nlm.nih.gov/pubmed/29674663
http://dx.doi.org/10.1038/s41598-018-24387-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5908846/
https://www.ncbi.nlm.nih.gov/pubmed/29674663
http://dx.doi.org/10.1038/s41598-018-24387-y

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