III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs

We report the use of black silicon (bSi) as a growth platform for III–V nanowires (NWs), which enables low reflectance over a broad wavelength range as well as fabrication of optoelectronic devices by metalorganic vapor phase epitaxy. In addition, a new isolated growth regime is reported for self-ca...

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Detalles Bibliográficos
Autores principales: Haggren, Tuomas, Khayrudinov, Vladislav, Dhaka, Veer, Jiang, Hua, Shah, Ali, Kim, Maria, Lipsanen, Harri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5913270/
https://www.ncbi.nlm.nih.gov/pubmed/29686418
http://dx.doi.org/10.1038/s41598-018-24665-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5913270/
https://www.ncbi.nlm.nih.gov/pubmed/29686418
http://dx.doi.org/10.1038/s41598-018-24665-9

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