Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concent...

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Detalles Bibliográficos
Autores principales: Zhang, Zi-Hui, Huang Chen, Sung-Wen, Chu, Chunshuang, Tian, Kangkai, Fang, Mengqian, Zhang, Yonghui, Bi, Wengang, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5915986/
https://www.ncbi.nlm.nih.gov/pubmed/29693213
http://dx.doi.org/10.1186/s11671-018-2539-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5915986/
https://www.ncbi.nlm.nih.gov/pubmed/29693213
http://dx.doi.org/10.1186/s11671-018-2539-9

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