Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires...

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Detalles Bibliográficos
Autores principales: Wu, Yao, Yan, Xin, Wei, Wei, Zhang, Jinnan, Zhang, Xia, Ren, Xiaomin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5918146/
https://www.ncbi.nlm.nih.gov/pubmed/29696454
http://dx.doi.org/10.1186/s11671-018-2503-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5918146/
https://www.ncbi.nlm.nih.gov/pubmed/29696454
http://dx.doi.org/10.1186/s11671-018-2503-8

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