Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

The Bi content in GaAs/GaAs(1 − x)Bi(x)/GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning trans...

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Detalles Bibliográficos
Autores principales: Baladés, N., Sales, D. L., Herrera, M., Tan, C. H., Liu, Y., Richards, R. D., Molina, S. I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5918147/
https://www.ncbi.nlm.nih.gov/pubmed/29696397
http://dx.doi.org/10.1186/s11671-018-2530-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5918147/
https://www.ncbi.nlm.nih.gov/pubmed/29696397
http://dx.doi.org/10.1186/s11671-018-2530-5

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