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Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

The Bi content in GaAs/GaAs(1 − x)Bi(x)/GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning trans...

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Detalles Bibliográficos
Autores principales:	Baladés, N., Sales, D. L., Herrera, M., Tan, C. H., Liu, Y., Richards, R. D., Molina, S. I.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2018
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5918147/ https://www.ncbi.nlm.nih.gov/pubmed/29696397 http://dx.doi.org/10.1186/s11671-018-2530-5

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