Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al [Formula: see text] O [Formula: see text]) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IG...

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Detalles Bibliográficos
Autores principales: Hu, Shiben, Ning, Honglong, Lu, Kuankuan, Fang, Zhiqiang, Li, Yuzhi, Yao, Rihui, Xu, Miao, Wang, Lei, Peng, Junbiao, Lu, Xubing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923527/
https://www.ncbi.nlm.nih.gov/pubmed/29584710
http://dx.doi.org/10.3390/nano8040197

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923527/
https://www.ncbi.nlm.nih.gov/pubmed/29584710
http://dx.doi.org/10.3390/nano8040197

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