Cargando…
Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes
In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al [Formula: see text] O [Formula: see text]) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IG...
Autores principales: | , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923527/ https://www.ncbi.nlm.nih.gov/pubmed/29584710 http://dx.doi.org/10.3390/nano8040197 |
_version_ | 1783318363054800896 |
---|---|
author | Hu, Shiben Ning, Honglong Lu, Kuankuan Fang, Zhiqiang Li, Yuzhi Yao, Rihui Xu, Miao Wang, Lei Peng, Junbiao Lu, Xubing |
author_facet | Hu, Shiben Ning, Honglong Lu, Kuankuan Fang, Zhiqiang Li, Yuzhi Yao, Rihui Xu, Miao Wang, Lei Peng, Junbiao Lu, Xubing |
author_sort | Hu, Shiben |
collection | PubMed |
description | In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al [Formula: see text] O [Formula: see text]) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al [Formula: see text] O [Formula: see text] PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al [Formula: see text] O [Formula: see text] PVL exhibited remarkable mobility of 33.5–220.1 cm [Formula: see text] /Vs when channel length varies from 60 to 560 [Formula: see text] m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. |
format | Online Article Text |
id | pubmed-5923527 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-59235272018-05-03 Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes Hu, Shiben Ning, Honglong Lu, Kuankuan Fang, Zhiqiang Li, Yuzhi Yao, Rihui Xu, Miao Wang, Lei Peng, Junbiao Lu, Xubing Nanomaterials (Basel) Article In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al [Formula: see text] O [Formula: see text]) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al [Formula: see text] O [Formula: see text] PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al [Formula: see text] O [Formula: see text] PVL exhibited remarkable mobility of 33.5–220.1 cm [Formula: see text] /Vs when channel length varies from 60 to 560 [Formula: see text] m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. MDPI 2018-03-27 /pmc/articles/PMC5923527/ /pubmed/29584710 http://dx.doi.org/10.3390/nano8040197 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hu, Shiben Ning, Honglong Lu, Kuankuan Fang, Zhiqiang Li, Yuzhi Yao, Rihui Xu, Miao Wang, Lei Peng, Junbiao Lu, Xubing Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes |
title | Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes |
title_full | Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes |
title_fullStr | Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes |
title_full_unstemmed | Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes |
title_short | Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes |
title_sort | mobility enhancement in amorphous in-ga-zn-o thin-film transistor by induced metallic in nanoparticles and cu electrodes |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923527/ https://www.ncbi.nlm.nih.gov/pubmed/29584710 http://dx.doi.org/10.3390/nano8040197 |
work_keys_str_mv | AT hushiben mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT ninghonglong mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT lukuankuan mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT fangzhiqiang mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT liyuzhi mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT yaorihui mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT xumiao mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT wanglei mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT pengjunbiao mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes AT luxubing mobilityenhancementinamorphousingaznothinfilmtransistorbyinducedmetallicinnanoparticlesandcuelectrodes |