Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Nitrogen dioxide (NO(2)) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO(2) responsivity of OTFTs to 15 ppm of NO(2) is 1408% under conditions of vertical annea...

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Detalles Bibliográficos
Autores principales: Hou, Sihui, Zhuang, Xinming, Yang, Zuchong, Yu, Junsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923533/
https://www.ncbi.nlm.nih.gov/pubmed/29596331
http://dx.doi.org/10.3390/nano8040203

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923533/
https://www.ncbi.nlm.nih.gov/pubmed/29596331
http://dx.doi.org/10.3390/nano8040203

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