A silicon metal-oxide-semiconductor electron spin-orbit qubit

The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin–orbit (SO) eff...

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Detalles Bibliográficos
Autores principales: Jock, Ryan M., Jacobson, N. Tobias, Harvey-Collard, Patrick, Mounce, Andrew M., Srinivasa, Vanita, Ward, Dan R., Anderson, John, Manginell, Ron, Wendt, Joel R., Rudolph, Martin, Pluym, Tammy, Gamble, John King, Baczewski, Andrew D., Witzel, Wayne M., Carroll, Malcolm S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5931988/
https://www.ncbi.nlm.nih.gov/pubmed/29720586
http://dx.doi.org/10.1038/s41467-018-04200-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5931988/
https://www.ncbi.nlm.nih.gov/pubmed/29720586
http://dx.doi.org/10.1038/s41467-018-04200-0

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