Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct...

Descripción completa

Detalles Bibliográficos
Autores principales: Dellis, S., Pliatsikas, N., Kalfagiannis, N., Lidor-Shalev, O., Papaderakis, A., Vourlias, G., Sotiropoulos, S., Koutsogeorgis, D. C., Mastai, Y., Patsalas, P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5934408/
https://www.ncbi.nlm.nih.gov/pubmed/29725079
http://dx.doi.org/10.1038/s41598-018-24684-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5934408/
https://www.ncbi.nlm.nih.gov/pubmed/29725079
http://dx.doi.org/10.1038/s41598-018-24684-6

Ejemplares similares