A “waiting” carbon nitride radical anion: a charge storage material and key intermediate in direct C–H thiolation of methylarenes using elemental sulfur as the “S”-source

Potassium poly(heptazine imide), a carbon nitride based semiconductor with high structural order and a valence band potential of +2.2 V vs. NHE, in the presence of hole scavengers and under visible light irradiation gives the corresponding polymeric radical anion, in which the specific density of un...

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Detalles Bibliográficos
Autores principales: Savateev, Aleksandr, Kurpil, Bogdan, Mishchenko, Artem, Zhang, Guigang, Antonietti, Markus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5935028/
https://www.ncbi.nlm.nih.gov/pubmed/29780491
http://dx.doi.org/10.1039/c8sc00745d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5935028/
https://www.ncbi.nlm.nih.gov/pubmed/29780491
http://dx.doi.org/10.1039/c8sc00745d

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