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A “waiting” carbon nitride radical anion: a charge storage material and key intermediate in direct C–H thiolation of methylarenes using elemental sulfur as the “S”-source
Potassium poly(heptazine imide), a carbon nitride based semiconductor with high structural order and a valence band potential of +2.2 V vs. NHE, in the presence of hole scavengers and under visible light irradiation gives the corresponding polymeric radical anion, in which the specific density of un...
Autores principales: | Savateev, Aleksandr, Kurpil, Bogdan, Mishchenko, Artem, Zhang, Guigang, Antonietti, Markus |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Royal Society of Chemistry
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5935028/ https://www.ncbi.nlm.nih.gov/pubmed/29780491 http://dx.doi.org/10.1039/c8sc00745d |
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