Terahertz electrical writing speed in an antiferromagnetic memory

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in...

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Detalles Bibliográficos
Autores principales: Olejník, Kamil, Seifert, Tom, Kašpar, Zdeněk, Novák, Vít, Wadley, Peter, Campion, Richard P., Baumgartner, Manuel, Gambardella, Pietro, Němec, Petr, Wunderlich, Joerg, Sinova, Jairo, Kužel, Petr, Müller, Melanie, Kampfrath, Tobias, Jungwirth, Tomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5938222/
https://www.ncbi.nlm.nih.gov/pubmed/29740601
http://dx.doi.org/10.1126/sciadv.aar3566

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5938222/
https://www.ncbi.nlm.nih.gov/pubmed/29740601
http://dx.doi.org/10.1126/sciadv.aar3566

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