Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Be...

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Detalles Bibliográficos
Autores principales: Sun, Feng, Li, Chen, Fu, Chaochao, Zhou, Xiangbiao, Luo, Jun, Zou, Wei, Qiu, Zhi-Jun, Wu, Dongping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951317/
https://www.ncbi.nlm.nih.gov/pubmed/29565304
http://dx.doi.org/10.3390/ma11040471

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951317/
https://www.ncbi.nlm.nih.gov/pubmed/29565304
http://dx.doi.org/10.3390/ma11040471

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