Subsurface Damage in Polishing Process of Silicon Carbide Ceramic

Subsurface damage (SSD) in the polishing process of silicon carbide (SiC) ceramic presents one of the most significant challenges for practical applications. In this study, the theoretical models of SSD depth are established on the basis of the material removal mechanism and indentation fracture mec...

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Detalles Bibliográficos
Autores principales: Gu, Yan, Zhu, Wenhui, Lin, Jieqiong, Lu, Mingming, Kang, Mingshuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951352/
https://www.ncbi.nlm.nih.gov/pubmed/29584694
http://dx.doi.org/10.3390/ma11040506

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951352/
https://www.ncbi.nlm.nih.gov/pubmed/29584694
http://dx.doi.org/10.3390/ma11040506

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