Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (T(IGZO)) are investigated. As the T(IGZO) increa...

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Detalles Bibliográficos
Autores principales: Wang, Dapeng, Zhao, Wenjing, Li, Hua, Furuta, Mamoru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951443/
https://www.ncbi.nlm.nih.gov/pubmed/29621154
http://dx.doi.org/10.3390/ma11040559

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951443/
https://www.ncbi.nlm.nih.gov/pubmed/29621154
http://dx.doi.org/10.3390/ma11040559

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