The C(i)C(s)(Si(I))(n) Defect in Silicon from a Density Functional Theory Perspective

Carbon constitutes a significant defect in silicon (Si) as it can interact with intrinsic point defects and affect the operation of devices. In heavily irradiated Si containing carbon the initially produced carbon interstitial–carbon substitutional (C(i)C(s)) defect can associate with self-interstit...

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Detalles Bibliográficos
Autores principales: Christopoulos, Stavros-Richard G., Sgourou, Efstratia N., Vovk, Ruslan V., Chroneos, Alexander, Londos, Charalampos A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951496/
https://www.ncbi.nlm.nih.gov/pubmed/29659555
http://dx.doi.org/10.3390/ma11040612

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951496/
https://www.ncbi.nlm.nih.gov/pubmed/29659555
http://dx.doi.org/10.3390/ma11040612

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