Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Detalles Bibliográficos
Autores principales: Shin, Yeonwoo, Kim, Sang Tae, Kim, Kuntae, Kim, Mi Young, Oh, Saeroonter, Jeong, Jae Kyeong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Author Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951812/
https://www.ncbi.nlm.nih.gov/pubmed/29760500
http://dx.doi.org/10.1038/s41598-018-25896-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951812/
https://www.ncbi.nlm.nih.gov/pubmed/29760500
http://dx.doi.org/10.1038/s41598-018-25896-6

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