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Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951812/ https://www.ncbi.nlm.nih.gov/pubmed/29760500 http://dx.doi.org/10.1038/s41598-018-25896-6 |
| _version_ | 1783323073844346880 |
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| author | Shin, Yeonwoo Kim, Sang Tae Kim, Kuntae Kim, Mi Young Oh, Saeroonter Jeong, Jae Kyeong |
| author_facet | Shin, Yeonwoo Kim, Sang Tae Kim, Kuntae Kim, Mi Young Oh, Saeroonter Jeong, Jae Kyeong |
| author_sort | Shin, Yeonwoo |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-5951812 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2018 |
| publisher | Nature Publishing Group UK |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-59518122018-05-21 Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer Shin, Yeonwoo Kim, Sang Tae Kim, Kuntae Kim, Mi Young Oh, Saeroonter Jeong, Jae Kyeong Sci Rep Author Correction Nature Publishing Group UK 2018-05-15 /pmc/articles/PMC5951812/ /pubmed/29760500 http://dx.doi.org/10.1038/s41598-018-25896-6 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
| spellingShingle | Author Correction Shin, Yeonwoo Kim, Sang Tae Kim, Kuntae Kim, Mi Young Oh, Saeroonter Jeong, Jae Kyeong Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer |
| title | Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer |
| title_full | Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer |
| title_fullStr | Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer |
| title_full_unstemmed | Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer |
| title_short | Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer |
| title_sort | author correction: the mobility enhancement of indium gallium zinc oxide transistors via low-temperature crystallization using a tantalum catalytic layer |
| topic | Author Correction |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951812/ https://www.ncbi.nlm.nih.gov/pubmed/29760500 http://dx.doi.org/10.1038/s41598-018-25896-6 |
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