Cargando…

Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Detalles Bibliográficos
Autores principales:	Shin, Yeonwoo, Kim, Sang Tae, Kim, Kuntae, Kim, Mi Young, Oh, Saeroonter, Jeong, Jae Kyeong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Author Correction
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951812/ https://www.ncbi.nlm.nih.gov/pubmed/29760500 http://dx.doi.org/10.1038/s41598-018-25896-6

Ejemplares similares

The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
por: Shin, Yeonwoo, et al.
Publicado: (2017)

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors
por: Lee, Heesoo, et al.
Publicado: (2016)

Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
por: On, Nuri, et al.
Publicado: (2020)

Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors
por: Seo, Seung Gi, et al.
Publicado: (2020)

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
por: Kim, Won-Gi, et al.
Publicado: (2016)

Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors
por: Kim, Yeong-gyu, et al.
Publicado: (2018)

Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors
por: Yan, Xingzhen, et al.
Publicado: (2023)

Low-temperature fabrication of an HfO(2) passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
por: Hong, Seonghwan, et al.
Publicado: (2017)

High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al(2)O(3) Gate Dielectric
por: Choi, Seungbeom, et al.
Publicado: (2019)

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
por: Hu, Shiben, et al.
Publicado: (2021)

Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors
por: Cho, Seong-Kun, et al.
Publicado: (2020)

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes
por: Park, Ji-Yeon, et al.
Publicado: (2015)

Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics
por: Choi, Hyun-Woong, et al.
Publicado: (2022)

Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers
por: Seo, Juhyung, et al.
Publicado: (2021)

Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors
por: Han, Youngmin, et al.
Publicado: (2023)

A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
por: Duan, Xinlv, et al.
Publicado: (2022)

Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors
por: Wu, Gwomei, et al.
Publicado: (2020)

Author Correction: Stabilizing indium sulfide for CO(2) electroreduction to formate at high rate by zinc incorporation
por: Chi, Li-Ping, et al.
Publicado: (2021)

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers
por: Colombara, Diego, et al.
Publicado: (2018)

Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments
por: Tak, Young Jun, et al.
Publicado: (2016)

Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics
por: Min, Jin-Gi, et al.
Publicado: (2021)

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories
por: Jeon, Hyeong-Un, et al.
Publicado: (2021)

Thermal Conductivity of Nano-Crystallized Indium-Gallium-Zinc Oxide Thin Films Determined by Differential Three-Omega Method
por: Khan, Rauf, et al.
Publicado: (2021)

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide
por: Noviyana, Imas, et al.
Publicado: (2017)

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
por: Ruan, Dun-Bao, et al.
Publicado: (2018)

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
por: Hamada, Hiroki
Publicado: (2017)

Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing
por: Yoon, Jongwon, et al.
Publicado: (2016)

Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance
por: Kim, Dongwook, et al.
Publicado: (2022)

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
por: Zhang, Xue, et al.
Publicado: (2017)

Local Order in Liquid Gallium–Indium Alloys
por: Amon, Alfred, et al.
Publicado: (2023)

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO(2) Gate Dielectrics by CF(4) Plasma Treatment
por: Fan, Ching-Lin, et al.
Publicado: (2018)

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors
por: Zhao, Han-Lin, et al.
Publicado: (2022)

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
por: Ma, Qian, et al.
Publicado: (2018)

Author Correction: Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
por: Kim, Gwangwoo, et al.
Publicado: (2019)

Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
por: Li, Dapan, et al.
Publicado: (2019)

Author Correction: Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide
por: da Silva, Bruno C., et al.
Publicado: (2020)

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor
por: Park, Hyun-Woo, et al.
Publicado: (2017)

Author Correction: Optoelectronic mixing with high-frequency graphene transistors
por: Montanaro, A., et al.
Publicado: (2021)

Author Correction: All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide
por: Bohn, Justus, et al.
Publicado: (2021)

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_mjobubh3940id6d0tg5acrla61