Indirect excitons in van der Waals heterostructures at room temperature

Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we...

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Detalles Bibliográficos
Autores principales: Calman, E. V., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., Geim, A. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951911/
https://www.ncbi.nlm.nih.gov/pubmed/29760404
http://dx.doi.org/10.1038/s41467-018-04293-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951911/
https://www.ncbi.nlm.nih.gov/pubmed/29760404
http://dx.doi.org/10.1038/s41467-018-04293-7

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