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Indirect excitons in van der Waals heterostructures at room temperature

Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we...

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Autores principales: Calman, E. V., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., Geim, A. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951911/
https://www.ncbi.nlm.nih.gov/pubmed/29760404
http://dx.doi.org/10.1038/s41467-018-04293-7
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author Calman, E. V.
Fogler, M. M.
Butov, L. V.
Hu, S.
Mishchenko, A.
Geim, A. K.
author_facet Calman, E. V.
Fogler, M. M.
Butov, L. V.
Hu, S.
Mishchenko, A.
Geim, A. K.
author_sort Calman, E. V.
collection PubMed
description Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. This is achieved in TMD heterostructures based on monolayers of MoS(2) separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices.
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spelling pubmed-59519112018-05-16 Indirect excitons in van der Waals heterostructures at room temperature Calman, E. V. Fogler, M. M. Butov, L. V. Hu, S. Mishchenko, A. Geim, A. K. Nat Commun Article Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. This is achieved in TMD heterostructures based on monolayers of MoS(2) separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices. Nature Publishing Group UK 2018-05-14 /pmc/articles/PMC5951911/ /pubmed/29760404 http://dx.doi.org/10.1038/s41467-018-04293-7 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Calman, E. V.
Fogler, M. M.
Butov, L. V.
Hu, S.
Mishchenko, A.
Geim, A. K.
Indirect excitons in van der Waals heterostructures at room temperature
title Indirect excitons in van der Waals heterostructures at room temperature
title_full Indirect excitons in van der Waals heterostructures at room temperature
title_fullStr Indirect excitons in van der Waals heterostructures at room temperature
title_full_unstemmed Indirect excitons in van der Waals heterostructures at room temperature
title_short Indirect excitons in van der Waals heterostructures at room temperature
title_sort indirect excitons in van der waals heterostructures at room temperature
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951911/
https://www.ncbi.nlm.nih.gov/pubmed/29760404
http://dx.doi.org/10.1038/s41467-018-04293-7
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