Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far structural...

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Detalles Bibliográficos
Autores principales: Dey, Arka B., Sanyal, Milan K., Farrer, Ian, Perumal, Karthick, Ritchie, David A., Li, Qianqian, Wu, Jinsong, Dravid, Vinayak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951952/
https://www.ncbi.nlm.nih.gov/pubmed/29760396
http://dx.doi.org/10.1038/s41598-018-25841-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5951952/
https://www.ncbi.nlm.nih.gov/pubmed/29760396
http://dx.doi.org/10.1038/s41598-018-25841-7

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