Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE

We report on the defect states incorporated in a-plane GaN crystals grown on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), using deep level transient spectroscopy (DLTS). Two defect states were observed at 0.2 eV and 0.55 eV below the conduction band minimum with defect densitie...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Vu, Thi Kim Oanh, Lee, Kyoung Su, Kim, Eun Kyu, Park, Sungsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5959929/
https://www.ncbi.nlm.nih.gov/pubmed/29777185
http://dx.doi.org/10.1038/s41598-018-26290-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5959929/
https://www.ncbi.nlm.nih.gov/pubmed/29777185
http://dx.doi.org/10.1038/s41598-018-26290-y

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