On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of semiconductor lasers with a Fabry–Pérot cavity usually includes facet cleavage, however, that is not compatible with on-chip photonic integration. Etching a...

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Detalles Bibliográficos
Autores principales: He, Junlei, Feng, Meixin, Zhong, Yaozong, Wang, Jin, Zhou, Rui, Gao, Hongwei, Zhou, Yu, Sun, Qian, Liu, Jianxun, Huang, Yingnan, Zhang, Shuming, Wang, Huaibing, Ikeda, Masao, Yang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5962534/
https://www.ncbi.nlm.nih.gov/pubmed/29784929
http://dx.doi.org/10.1038/s41598-018-26305-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5962534/
https://www.ncbi.nlm.nih.gov/pubmed/29784929
http://dx.doi.org/10.1038/s41598-018-26305-8

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