Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high...

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Detalles Bibliográficos
Autores principales: Liu, Po Tsun, Ruan, Dun Bao, Yeh, Xiu Yun, Chiu, Yu Chuan, Zheng, Guang Ting, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5970141/
https://www.ncbi.nlm.nih.gov/pubmed/29802363
http://dx.doi.org/10.1038/s41598-018-26580-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5970141/
https://www.ncbi.nlm.nih.gov/pubmed/29802363
http://dx.doi.org/10.1038/s41598-018-26580-5

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