Two yellow luminescence bands in undoped GaN

Two yellow luminescence bands related to different defects have been revealed in undoped GaN grown by hydride vapor phase epitaxy (HVPE). One of them, labeled YL1, has the zero-phonon line (ZPL) at 2.57 eV and the band maximum at 2.20 eV at low temperature. This luminescence band is the ubiquitous y...

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Detalles Bibliográficos
Autores principales: Reshchikov, M. A., McNamara, J. D., Helava, H., Usikov, A., Makarov, Yu.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5970192/
https://www.ncbi.nlm.nih.gov/pubmed/29802310
http://dx.doi.org/10.1038/s41598-018-26354-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5970192/
https://www.ncbi.nlm.nih.gov/pubmed/29802310
http://dx.doi.org/10.1038/s41598-018-26354-z

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