In situ measurement of autophagy under nutrient starvation based on interfacial pH sensing

In this study, we report a novel method for the in situ measurement of autophagy under nutrient starvation using a principle of semiconductor technology. A semiconductor-based field-effect transistor (FET) biosensor enables the direct detection of ionic or molecular charges under biological conditio...

Descripción completa

Detalles Bibliográficos
Autores principales: Sakata, Toshiya, Saito, Akiko, Sugimoto, Haruyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5973944/
https://www.ncbi.nlm.nih.gov/pubmed/29844482
http://dx.doi.org/10.1038/s41598-018-26719-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5973944/
https://www.ncbi.nlm.nih.gov/pubmed/29844482
http://dx.doi.org/10.1038/s41598-018-26719-4

Ejemplares similares