High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (−36 mV/log [Pb(2+)]) surpassing the limit of ideal sensitivity (−29.58 mV/log [Pb(2+...

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Detalles Bibliográficos
Autores principales: Chen, Yi-Ting, Sarangadharan, Indu, Sukesan, Revathi, Hseih, Ching-Yen, Lee, Geng-Yen, Chyi, Jen-Inn, Wang, Yu-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5974191/
https://www.ncbi.nlm.nih.gov/pubmed/29844607
http://dx.doi.org/10.1038/s41598-018-26792-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5974191/
https://www.ncbi.nlm.nih.gov/pubmed/29844607
http://dx.doi.org/10.1038/s41598-018-26792-9

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