Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility...

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Detalles Bibliográficos
Autores principales: Chung, Jae-Moon, Zhang, Xiaokun, Shang, Fei, Kim, Ji-Hoon, Wang, Xiao-Lin, Liu, Shuai, Yang, Baoguo, Xiang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5975049/
https://www.ncbi.nlm.nih.gov/pubmed/29845334
http://dx.doi.org/10.1186/s11671-018-2571-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5975049/
https://www.ncbi.nlm.nih.gov/pubmed/29845334
http://dx.doi.org/10.1186/s11671-018-2571-9

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