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Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility...

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Autores principales: Chung, Jae-Moon, Zhang, Xiaokun, Shang, Fei, Kim, Ji-Hoon, Wang, Xiao-Lin, Liu, Shuai, Yang, Baoguo, Xiang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5975049/
https://www.ncbi.nlm.nih.gov/pubmed/29845334
http://dx.doi.org/10.1186/s11671-018-2571-9
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author Chung, Jae-Moon
Zhang, Xiaokun
Shang, Fei
Kim, Ji-Hoon
Wang, Xiao-Lin
Liu, Shuai
Yang, Baoguo
Xiang, Yong
author_facet Chung, Jae-Moon
Zhang, Xiaokun
Shang, Fei
Kim, Ji-Hoon
Wang, Xiao-Lin
Liu, Shuai
Yang, Baoguo
Xiang, Yong
author_sort Chung, Jae-Moon
collection PubMed
description To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm(2)/V s and the V(th) uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V(th) shift of CL-ES-structured device significantly decreased to − 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (− 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.
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spelling pubmed-59750492018-06-11 Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers Chung, Jae-Moon Zhang, Xiaokun Shang, Fei Kim, Ji-Hoon Wang, Xiao-Lin Liu, Shuai Yang, Baoguo Xiang, Yong Nanoscale Res Lett Nano Express To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm(2)/V s and the V(th) uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V(th) shift of CL-ES-structured device significantly decreased to − 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (− 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible. Springer US 2018-05-29 /pmc/articles/PMC5975049/ /pubmed/29845334 http://dx.doi.org/10.1186/s11671-018-2571-9 Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chung, Jae-Moon
Zhang, Xiaokun
Shang, Fei
Kim, Ji-Hoon
Wang, Xiao-Lin
Liu, Shuai
Yang, Baoguo
Xiang, Yong
Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
title Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
title_full Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
title_fullStr Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
title_full_unstemmed Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
title_short Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
title_sort enhancement of a-igzo tft device performance using a clean interface process via etch-stopper nano-layers
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5975049/
https://www.ncbi.nlm.nih.gov/pubmed/29845334
http://dx.doi.org/10.1186/s11671-018-2571-9
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