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Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility...
Autores principales: | Chung, Jae-Moon, Zhang, Xiaokun, Shang, Fei, Kim, Ji-Hoon, Wang, Xiao-Lin, Liu, Shuai, Yang, Baoguo, Xiang, Yong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5975049/ https://www.ncbi.nlm.nih.gov/pubmed/29845334 http://dx.doi.org/10.1186/s11671-018-2571-9 |
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