Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers

Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance...

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Detalles Bibliográficos
Autores principales: Yao, Xiannian, Duan, Qingqing, Tong, Junwei, Chang, Yufang, Zhou, Lianqun, Qin, Gaowu, Zhang, Xianmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978098/
https://www.ncbi.nlm.nih.gov/pubmed/29751514
http://dx.doi.org/10.3390/ma11050721

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978098/
https://www.ncbi.nlm.nih.gov/pubmed/29751514
http://dx.doi.org/10.3390/ma11050721

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