Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c-plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with...

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Detalles Bibliográficos
Autores principales: Islam, Abu Bashar Mohammad Hamidul, Shim, Jong-In, Shin, Dong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978120/
https://www.ncbi.nlm.nih.gov/pubmed/29735933
http://dx.doi.org/10.3390/ma11050743

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978120/
https://www.ncbi.nlm.nih.gov/pubmed/29735933
http://dx.doi.org/10.3390/ma11050743

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