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Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c-plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with...

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Detalles Bibliográficos
Autores principales:	Islam, Abu Bashar Mohammad Hamidul, Shim, Jong-In, Shin, Dong-Soo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978120/ https://www.ncbi.nlm.nih.gov/pubmed/29735933 http://dx.doi.org/10.3390/ma11050743

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