Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO(2) Gate Dielectrics by CF(4) Plasma Treatment

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO(2) gate insulator and CF(4) plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO(2) gate dielectr...

Descripción completa

Detalles Bibliográficos
Autores principales: Fan, Ching-Lin, Tseng, Fan-Ping, Tseng, Chiao-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978201/
https://www.ncbi.nlm.nih.gov/pubmed/29772767
http://dx.doi.org/10.3390/ma11050824

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978201/
https://www.ncbi.nlm.nih.gov/pubmed/29772767
http://dx.doi.org/10.3390/ma11050824

Ejemplares similares