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Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO(2) Gate Dielectrics by CF(4) Plasma Treatment

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO(2) gate insulator and CF(4) plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO(2) gate dielectr...

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Detalles Bibliográficos
Autores principales:	Fan, Ching-Lin, Tseng, Fan-Ping, Tseng, Chiao-Yuan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978201/ https://www.ncbi.nlm.nih.gov/pubmed/29772767 http://dx.doi.org/10.3390/ma11050824

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