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Electric-field-controlled interface dipole modulation for Si-based memory devices
Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In th...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5981312/ https://www.ncbi.nlm.nih.gov/pubmed/29855481 http://dx.doi.org/10.1038/s41598-018-26692-y |