Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage (V(t)) can be used to accurately measure the chip local te...

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Detalles Bibliográficos
Autores principales: Malits, Maria, Brouk, Igor, Nemirovsky, Yael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5982330/
https://www.ncbi.nlm.nih.gov/pubmed/29783742
http://dx.doi.org/10.3390/s18051629

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5982330/
https://www.ncbi.nlm.nih.gov/pubmed/29783742
http://dx.doi.org/10.3390/s18051629

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