Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN contacts for interfacial analysis and process optimization...

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Detalles Bibliográficos
Autores principales: Huang, Rong, Li, Fangsen, Liu, Tong, Zhao, Yanfei, Zhu, Yafeng, Shen, Yang, Lu, Xiaoming, Huang, Zengli, Liu, Jianping, Zhang, Liqun, Zhang, Shuming, Li, Zhanping, Dingsun, An, Yang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5986764/
https://www.ncbi.nlm.nih.gov/pubmed/29867157
http://dx.doi.org/10.1038/s41598-018-26734-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5986764/
https://www.ncbi.nlm.nih.gov/pubmed/29867157
http://dx.doi.org/10.1038/s41598-018-26734-5

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